N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252) surface-mount package. Features a maximum drain-source voltage of 30V and a continuous drain current of 16A. Offers a low drain-source on-resistance of 67mΩ at 10V Vgs. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 32.6W.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Nexperia PHD16N03LT,118 technical specifications.
General
| Package/Case | DPAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Mounting | Surface Mount |
| Jedec | TO-252 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±15V |
| Maximum Continuous Drain Current | 16A |
| Maximum Drain Source Resistance | 67@10VmOhm |
| Typical Gate Charge @ Vgs | 8.5@10VnC |
| Typical Gate Charge @ 10V | 8.5nC |
| Typical Input Capacitance @ Vds | 210@30VpF |
| Maximum Power Dissipation | 32600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Nexperia PHD16N03LT,118 Datasheet
Download the complete datasheet for Nexperia PHD16N03LT,118 to view detailed technical specifications.
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