N-channel Power MOSFET featuring TrenchFET technology, designed for surface mounting in a DPAK (TO-252) package. This single-element transistor offers a maximum drain-source voltage of 30V and a continuous drain current of 13.1A. It boasts a low maximum drain-source on-resistance of 100 mOhm at 10V, with a typical gate charge of 5.2 nC. Operating across a wide temperature range from -55°C to 175°C, this component is suitable for demanding power applications.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Nexperia PHD16N03T,118 technical specifications.
General
| Package/Case | DPAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Mounting | Surface Mount |
| Jedec | TO-252 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 13.1A |
| Maximum Drain Source Resistance | 100@10VmOhm |
| Typical Gate Charge @ Vgs | 5.2@10VnC |
| Typical Gate Charge @ 10V | 5.2nC |
| Typical Input Capacitance @ Vds | 180@30VpF |
| Maximum Power Dissipation | 32600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Nexperia PHD16N03T,118 Datasheet
Download the complete datasheet for Nexperia PHD16N03T,118 to view detailed technical specifications.
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