N-channel Power MOSFET with 200V drain-source voltage and 4A continuous drain current. Features TrenchFET process technology and a single element configuration. Surface mountable in an 8-pin SO package (MS-012AA) with a maximum power dissipation of 6250mW. Operates across a temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Nexperia PHK4NQ20T,518 technical specifications.
General
| Package/Case | SO |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4(Max) |
| Package Height (mm) | 1.45(Max) |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4A |
| Maximum Drain Source Resistance | 130@10VmOhm |
| Typical Gate Charge @ Vgs | 26@10VnC |
| Typical Gate Charge @ 10V | 26nC |
| Typical Input Capacitance @ Vds | 1230@25VpF |
| Maximum Power Dissipation | 6250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Nexperia PHK4NQ20T,518 Datasheet
Download the complete datasheet for Nexperia PHK4NQ20T,518 to view detailed technical specifications.
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