N-channel enhancement mode power MOSFET designed for high-efficiency switching applications. Features a maximum drain-source voltage of 100V and a continuous drain current of 47A. Offers a low on-resistance of 28mΩ at 10V Vgs, with a typical gate charge of 66nC. Packaged in a TO-220AB through-hole mount configuration with 3 pins and a tab, supporting a maximum power dissipation of 166W. Operates across a wide temperature range from -55°C to 175°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Nexperia PHP47NQ10T,127 technical specifications.
General
Package/Case
TO-220AB
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
9.4(Max)
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
47A
Maximum Drain Source Resistance
28@10VmOhm
Typical Gate Charge @ Vgs
66@10VnC
Typical Gate Charge @ 10V
66nC
Typical Input Capacitance @ Vds
2320@25VpF
Maximum Power Dissipation
166000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
H2HX9
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Nexperia PHP47NQ10T,127 Datasheet
Download the complete datasheet for Nexperia PHP47NQ10T,127 to view detailed technical specifications.
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