NPN bipolar junction transistor (BJT) designed for high-voltage applications. Features a maximum collector current of 150 mA and a collector-emitter voltage rating of 500 V. Offers low VCEsat for efficient operation. Encased in a TO-236AB 3-pin package with dual terminal positions.
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Technical Specifications
Nexperia PMBTA45,215 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
Nexperia PMBTA45,215 Datasheet
Download the complete datasheet for Nexperia PMBTA45,215 to view detailed technical specifications.
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