NPN bipolar junction transistor (BJT) designed for high-voltage applications. Features a maximum collector current of 150 mA and a collector-emitter voltage rating of 500 V. Offers low VCEsat for efficient operation. Encased in a TO-236AB 3-pin package with dual terminal positions.
Quick Jump:
Technical Specifications
Nexperia PMBTA45,215 technical specifications.
General
Number of Terminals
3
Terminal Position
DUAL
JEDEC Package Code
TO-236AB
Pin Count
3
Number of Elements
1
Compliance
REACH
Compliant
Military Spec
False
Datasheet
Nexperia PMBTA45,215 Datasheet
Download the complete datasheet for Nexperia PMBTA45,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.