
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 500V collector-emitter voltage and 0.15A maximum DC collector current. This single-element transistor offers 300mW maximum power dissipation and a minimum DC current gain of 50. Packaged in a 3-pin SOT-23 (TO-236AB) with gull-wing leads, it operates from -55°C to 150°C.
Nexperia PMBTA45-235 technical specifications.
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