N-channel enhancement mode MOSFET, single element, TMOS process technology, in a 3-pin SC-70 surface mount package. Features a maximum drain-source voltage of 30V, maximum continuous drain current of 1.7A, and a maximum drain-source on-resistance of 80mΩ at 10V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 355mW.
Nexperia PMF87EN technical specifications.
| Package/Case | SC-70 |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.2(Max) |
| Package Width (mm) | 1.35(Max) |
| Package Height (mm) | 1(Max) |
| Mounting | Surface Mount |
| Jedec | MO-203AA |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 1.7A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 80@10VmOhm |
| Typical Gate Charge @ Vgs | 3.1@10VnC |
| Typical Gate Charge @ 10V | 3.1nC |
| Typical Input Capacitance @ Vds | 135@15VpF |
| Maximum Power Dissipation | 355mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Nexperia PMF87EN to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.