Surface mount N-channel enhancement mode MOSFET in a 3-pin SC-70 package. Features a 30V drain-source voltage, 1.7A continuous drain current, and 80mΩ drain-source resistance at 10V. This single element transistor utilizes TMOS process technology and offers a maximum power dissipation of 355mW. Operating temperature range is -55°C to 150°C.
PackageSC-70
MountingSurface Mount
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Technical Specifications
Nexperia PMF87EN,115 technical specifications.
General
| Package/Case | SC-70 |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.2(Max) |
| Package Width (mm) | 1.35(Max) |
| Package Height (mm) | 1(Max) |
| Mounting | Surface Mount |
| Jedec | MO-203AA |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 1.7A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 80@10VmOhm |
| Typical Gate Charge @ Vgs | 3.1@10VnC |
| Typical Gate Charge @ 10V | 3.1nC |
| Typical Input Capacitance @ Vds | 135@15VpF |
| Maximum Power Dissipation | 355mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PMF87EN,115 Datasheet
Download the complete datasheet for Nexperia PMF87EN,115 to view detailed technical specifications.
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