N-channel enhancement mode MOSFET in a 6-pin TSOP package, designed for surface mounting. Features a 30V drain-source voltage, 5.1A continuous drain current, and 2.5V gate threshold voltage. Offers low drain-source on-resistance of 31mΩ at 10V. Suitable for small signal applications with a maximum power dissipation of 1250mW and an operating temperature range of -55°C to 150°C.
PackageTSOP
MountingSurface Mount
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Technical Specifications
Nexperia PMN35EN,125 technical specifications.
General
| Package/Case | TSOP |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3.1(Max) |
| Package Width (mm) | 1.7(Max) |
| Package Height (mm) | 1(Max) |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 5.1A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 31@10VmOhm |
| Typical Gate Charge @ Vgs | 6.2@10VnC |
| Typical Gate Charge @ 10V | 6.2nC |
| Typical Input Capacitance @ Vds | 334@15VpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PMN35EN,125 Datasheet
Download the complete datasheet for Nexperia PMN35EN,125 to view detailed technical specifications.
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