P-channel enhancement mode MOSFET, SOT-23 package, featuring 20V drain-source voltage and 3.2A continuous drain current. This single-element TMOS process transistor offers a maximum gate-source voltage of 8V and a low 66mOhm drain-source resistance at 4.5V. The surface-mount device has a 3-pin gull-wing lead configuration with a 0.95mm pin pitch and dimensions of 3mm x 1.4mm x 1mm. Operating temperature range is -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Nexperia PMV50UPE,215 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | 8V |
| Maximum Continuous Drain Current | 3.2A |
| Maximum Gate Threshold Voltage | 0.9V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 24@10VpF |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PMV50UPE,215 Datasheet
Download the complete datasheet for Nexperia PMV50UPE,215 to view detailed technical specifications.
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