N-channel enhancement mode power MOSFET, 20V drain-source voltage, 3.76A continuous drain current. Features 85mOhm maximum drain-source resistance at 4.5V gate-source voltage and 5.4nC typical gate charge. Housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads for surface mounting. Operates across a wide temperature range of -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Nexperia PMV56XN/DG,215 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 3.76A |
| Maximum Gate Threshold Voltage | 0.65(Min)V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 230@10VpF |
| Maximum Power Dissipation | 1920mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Nexperia PMV56XN/DG,215 Datasheet
Download the complete datasheet for Nexperia PMV56XN/DG,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.