N-channel enhancement mode MOSFET for small signal applications. Features a 60V drain-source voltage rating and 0.65A continuous drain current. This single-element transistor utilizes TMOS process technology and is housed in a compact 3-pin DFN-B surface-mount package measuring 1 x 0.6 x 0.36mm. Key electrical characteristics include a 3V gate threshold voltage and a maximum drain-source resistance of 940 mOhm at 10V.
PackageDFN-B
MountingSurface Mount
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Technical Specifications
Nexperia PMZB790SN,315 technical specifications.
General
| Package/Case | DFN-B |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1 |
| Package Width (mm) | 0.6 |
| Package Height (mm) | 0.36(Max) |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 0.65A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 940@10VmOhm |
| Typical Gate Charge @ Vgs | 1.05@10VnC |
| Typical Gate Charge @ 10V | 1.05nC |
| Typical Input Capacitance @ Vds | 23@30VpF |
| Maximum Power Dissipation | 715mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PMZB790SN,315 Datasheet
Download the complete datasheet for Nexperia PMZB790SN,315 to view detailed technical specifications.
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