N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a 30V drain-source voltage, 75A continuous drain current, and low 2.8mOhm drain-source resistance at 10V. Includes a tab for enhanced thermal performance. Operates across a wide temperature range from -55°C to 175°C.
Nexperia PSMN003-30B,118 technical specifications.
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.4(Max) |
| Package Height (mm) | 4.5(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 75A |
| Maximum Drain Source Resistance | 2.8@10VmOhm |
| Typical Gate Charge @ Vgs | 170@10VnC |
| Typical Gate Charge @ 10V | 170nC |
| Typical Input Capacitance @ Vds | 9200@25VpF |
| Maximum Power Dissipation | 230000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Nexperia PSMN003-30B,118 to view detailed technical specifications.
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