N-channel Power MOSFET, surface mount, LFPAK package (5.3mm x 4.7mm x 1.1mm max). Features 40V drain-source voltage, 100A continuous drain current, and 1.55mΩ max drain-source resistance at 10V. Operates from -55°C to 150°C with 288W max power dissipation. Includes 126nC typical gate charge at 10V and 7790pF typical input capacitance at 20V.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Nexperia PSMN1R6-40YLC technical specifications.
General
Package/Case
LFPAK
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
5.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
1.1(Max)
Mounting
Surface Mount
Configuration
Single Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
NextPower
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
100A
Maximum Gate Threshold Voltage
1.95V
Maximum Drain Source Resistance
1.55@10VmOhm
Typical Gate Charge @ Vgs
126@10V|115@10V|[email protected]nC
Typical Gate Charge @ 10V
126nC
Typical Input Capacitance @ Vds
7790@20VpF
Maximum Power Dissipation
288000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
H2HX9
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Nexperia PSMN1R6-40YLC Datasheet
Download the complete datasheet for Nexperia PSMN1R6-40YLC to view detailed technical specifications.
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