N-channel Power MOSFET, N-CH enhancement mode, 40V drain-source voltage, 100A continuous drain current, 1.55mΩ max drain-source resistance at 10V. Features LFPAK surface mount package, 5 pins (4+Tab), 5.3mm max length, 4.7mm max width, 1.1mm max height. NextPower process technology, 288W max power dissipation, operating temperature range of -55°C to 150°C.
PackageLFPAK
MountingSurface Mount
Quick Jump:
Technical Specifications
Nexperia PSMN1R6-40YLC:115 technical specifications.
General
| Package/Case | LFPAK |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 5.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NextPower |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 100A |
| Maximum Gate Threshold Voltage | 1.95V |
| Maximum Drain Source Resistance | 1.55@10VmOhm |
| Typical Gate Charge @ Vgs | 126@10V|115@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 126nC |
| Typical Input Capacitance @ Vds | 7790@20VpF |
| Maximum Power Dissipation | 288000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PSMN1R6-40YLC:115 Datasheet
Download the complete datasheet for Nexperia PSMN1R6-40YLC:115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.