N-channel Power MOSFET, 40V drain-source voltage, 100A continuous drain current. Features 1.8mΩ maximum drain-source resistance at 10V Vgs. Surface mountable in a 5-pin LFPAK package (4 pins + tab), JEDEC MO-235 compliant. Operates from -55°C to 175°C with 272W maximum power dissipation.
Nexperia PSMN1R8-40YLC technical specifications.
| Package/Case | LFPAK |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | MO-235 |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NextPower |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 100A |
| Maximum Gate Threshold Voltage | 1.95V |
| Maximum Drain Source Resistance | 1.8@10VmOhm |
| Typical Gate Charge @ Vgs | 96@10V|88@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 96nC |
| Typical Input Capacitance @ Vds | 6680@20VpF |
| Maximum Power Dissipation | 272000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Nexperia PSMN1R8-40YLC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.