N-channel Power MOSFET, N-CH, single element, enhancement mode, 30V drain-source voltage, 100A continuous drain current. Features 2.1 mOhm maximum drain-source resistance at 10V, 2.15V gate threshold voltage, and 117nC typical gate charge at 10V. Housed in a D2PAK surface-mount package with 3 pins (2+Tab), offering a maximum power dissipation of 211W and operating temperature range of -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Nexperia PSMN2R0-30BL,118 technical specifications.
General
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.4(Max) |
| Package Height (mm) | 4.5(Max) |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 100A |
| Maximum Gate Threshold Voltage | 2.15V |
| Maximum Drain Source Resistance | 2.1@10VmOhm |
| Typical Gate Charge @ Vgs | 117@10V|107@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 117nC |
| Typical Input Capacitance @ Vds | 6810@15VpF |
| Maximum Power Dissipation | 211000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PSMN2R0-30BL,118 Datasheet
Download the complete datasheet for Nexperia PSMN2R0-30BL,118 to view detailed technical specifications.
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