N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 30V and continuous drain current of 100A. Features low drain-source on-resistance of 4.3mΩ at 10V. Housed in a TO-220AB package for through-hole mounting, this single-element transistor offers a maximum power dissipation of 103W and operates across a wide temperature range from -55°C to 175°C. Typical gate charge is 41.5nC at 10V, with input capacitance of 2400pF at 12V.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Nexperia PSMN4R3-30PL technical specifications.
General
| Package/Case | TO-220AB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 100A |
| Maximum Drain Source Resistance | 4.3@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|41.5@10VnC |
| Typical Gate Charge @ 10V | 41.5nC |
| Typical Input Capacitance @ Vds | 2400@12VpF |
| Maximum Power Dissipation | 103000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PSMN4R3-30PL Datasheet
Download the complete datasheet for Nexperia PSMN4R3-30PL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.