N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 67.5A continuous drain current. This single-element transistor is housed in a TO-220F package with a through-hole mounting type. Key specifications include a low 5mOhm drain-source resistance at 10V, a typical gate charge of 153nC at 10V, and a maximum power dissipation of 63.8W. Operating temperature range spans from -55°C to 175°C.
PackageTO-220F
MountingThrough Hole
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Technical Specifications
Nexperia PSMN5R0-100XS technical specifications.
General
| Package/Case | TO-220F |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 15.8(Max) |
| Mounting | Through Hole |
| Jedec | TO-220-F |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 67.5A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 5@10VmOhm |
| Typical Gate Charge @ Vgs | 153@10VnC |
| Typical Gate Charge @ 10V | 153nC |
| Typical Input Capacitance @ Vds | 9900@50VpF |
| Maximum Power Dissipation | 63800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Nexperia PSMN5R0-100XS Datasheet
Download the complete datasheet for Nexperia PSMN5R0-100XS to view detailed technical specifications.
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