N-channel Power MOSFET, 80V drain-source voltage, 82A continuous drain current. Features 8.5 mOhm maximum drain-source resistance at 10V. Surface mountable in a 5-pin LFPAK package (4 pins + tab), JEDEC MO-235 compliant. Process technology utilizes TMOS, with typical gate charge of 55 nC at 10V and input capacitance of 3640 pF at 40V. Operates across a temperature range of -55°C to 175°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Nexperia PSMN8R2-80YS technical specifications.
General
| Package/Case | LFPAK |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | MO-235 |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 80V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 82A |
| Maximum Drain Source Resistance | 8.5@10VmOhm |
| Typical Gate Charge @ Vgs | 48@10V|55@10VnC |
| Typical Gate Charge @ 10V | 55nC |
| Typical Input Capacitance @ Vds | 3640@40VpF |
| Maximum Power Dissipation | 130000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PSMN8R2-80YS Datasheet
Download the complete datasheet for Nexperia PSMN8R2-80YS to view detailed technical specifications.
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