N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 70A continuous drain current. This single-element transistor utilizes TMOS process technology and is housed in a 5-pin LFPAK surface-mount package (MO-235) with a low profile of 1.1mm maximum height. It offers a low drain-source on-resistance of 8.6 mOhm at 10V Vgs and a maximum power dissipation of 74W, operating across a wide temperature range from -55°C to 175°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Nexperia PSMN8R3-40YS technical specifications.
General
| Package/Case | LFPAK |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | MO-235 |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 70A |
| Maximum Drain Source Resistance | 8.6@10VmOhm |
| Typical Gate Charge @ Vgs | 17@10V|20@10VnC |
| Typical Gate Charge @ 10V | 20nC |
| Typical Input Capacitance @ Vds | 1215@20VpF |
| Maximum Power Dissipation | 74000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia PSMN8R3-40YS Datasheet
Download the complete datasheet for Nexperia PSMN8R3-40YS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.