N-channel enhancement mode power MOSFET in a 3-pin SOT-23 (TO-236AB) surface-mount package. Features a maximum drain-source voltage of 30V, continuous drain current of 1.7A, and a typical gate threshold voltage of 2V. Offers low drain-source on-resistance of 117mOhm at 10V, with typical gate charge of 4.6nC and input capacitance of 147pF at 10V. Maximum power dissipation is 830mW, operating temperature range from -65°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1.7A |
| Maximum Gate Threshold Voltage | 2(Typ)V |
| Maximum Drain Source Resistance | 117@10VmOhm |
| Typical Gate Charge @ Vgs | 4.6@10VnC |
| Typical Gate Charge @ 10V | 4.6nC |
| Typical Input Capacitance @ Vds | 147@10VpF |
| Maximum Power Dissipation | 830mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
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