The NTE Electronics 2N2405 is a TO-39 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 90V and a maximum collector current of 10nA. It has a maximum power dissipation of 1W and can operate over a temperature range of -65°C to 200°C. The transistor is mounted through a hole and is suitable for use in a variety of applications. The 2N2405 is a discrete semiconductor device.
PackageTO-39
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics 2N2405 technical specifications.
General
| Package/Case | TO-39 |
| Collector Emitter Breakdown Voltage | 90V |
| Collector Emitter Voltage (VCEO) | 90V |
| Collector-emitter Voltage-Max | 500mV |
| Max Collector Current | 10nA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics 2N2405 Datasheet
Download the complete datasheet for NTE Electronics 2N2405 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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