NPN bipolar junction transistor (BJT) in a TO-39 package, designed for through-hole mounting. Features a collector-emitter breakdown voltage of 80V and a collector-base voltage of 140V. Offers a continuous collector current rating of 1A and a maximum power dissipation of 5W. Operates up to a transition frequency of 100MHz and a maximum operating temperature of 200°C. This RoHS compliant component is lead-free.
PackageTO-39
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics 2N3019 technical specifications.
General
Package/Case
TO-39
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Current Rating
1A
Lead Free
Lead Free
Max Collector Current
10nA
Max Operating Temperature
200°C
Max Power Dissipation
800mW
Mount
Through Hole
Packaging
Bulk
Polarity
NPN
Power Dissipation
5W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
140V
Compliance
RoHS
Compliant
Datasheet
NTE Electronics 2N3019 Datasheet
Download the complete datasheet for NTE Electronics 2N3019 to view detailed technical specifications.
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