
NPN bipolar junction transistor (BJT) in a TO-39 package, designed for through-hole mounting. Features a collector-emitter breakdown voltage of 80V and a collector-base voltage of 140V. Offers a continuous collector current rating of 1A and a maximum power dissipation of 5W. Operates up to a transition frequency of 100MHz and a maximum operating temperature of 200°C. This RoHS compliant component is lead-free.
NTE Electronics 2N3019 technical specifications.
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Lead Free | Lead Free |
| Max Collector Current | 10nA |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 140V |
| RoHS | Compliant |
Download the complete datasheet for NTE Electronics 2N3019 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
