The NTE Electronics 2N5210 is a TO-92 packaged bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 50nA. It has a maximum power dissipation of 625mW and can operate at temperatures up to 150°C. The transistor is a NPN type and is mounted through a hole. It has a transition frequency of 30MHz.
PackageTO-92
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics 2N5210 technical specifications.
General
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 700mV |
| Max Collector Current | 50nA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Polarity | NPN |
| Transition Frequency | 30MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics 2N5210 Datasheet
Download the complete datasheet for NTE Electronics 2N5210 to view detailed technical specifications.
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