NTE Electronics
NTE102A
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Germanium, TO-1
PackageTO-1
Current Rating1A
MountingThrough Hole
PolarityPNP
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Technical Specifications
NTE Electronics NTE102A technical specifications.
General
| Amplifier Type | MEDIUM POWER |
| Package/Case | TO-1 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Saturation Voltage | 170mV |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector-emitter Voltage-Max | 170mV |
| Current Rating | 1A |
| Diameter | 6.09mm |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.409inch |
| Max Collector Current | 25uA |
| Max Operating Temperature | 90°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650mW |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 650mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE102A Datasheet
Download the complete datasheet for NTE Electronics NTE102A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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