NTE Electronics
NTE103A
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Germanium, TO-1
PackageTO-1
MountingThrough Hole
PolarityNPN
Power175W
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Technical Specifications
NTE Electronics NTE103A technical specifications.
General
| Package/Case | TO-1 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 170mV |
| Emitter Base Voltage (VEBO) | 10V |
| Max Collector Current | 25uA |
| Max Operating Temperature | 90°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650mW |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 175W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE103A Datasheet
Download the complete datasheet for NTE Electronics NTE103A to view detailed technical specifications.
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