NTE Electronics
NTE106
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-18, TO-18, 3 PIN
PackageTO-18
MountingThrough Hole
PolarityPNP
Power1.2W
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Technical Specifications
NTE Electronics NTE106 technical specifications.
General
| Package/Case | TO-18 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 600mV |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Diameter | 5.84mm |
| Emitter Base Voltage (VEBO) | 4.5V |
| Height | 0.21inch |
| Max Collector Current | 200mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 360mW |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 1.2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 1.1GHz |
| Type | Switch |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE106 Datasheet
Download the complete datasheet for NTE Electronics NTE106 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.