NTE Electronics
NTE127
Power Bipolar Transistor, 10A I(C), 1-Element, PNP, Germanium, TO-3, Metal, 2 Pin,
PackageTO-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
NTE Electronics NTE127 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 320V |
| Collector Emitter Breakdown Voltage | 320V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 2V |
| Max Collector Current | 200uA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 5W |
| Mount | Through Hole |
| Polarity | PNP |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE127 Datasheet
Download the complete datasheet for NTE Electronics NTE127 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.