NTE Electronics
NTE128
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
Frequency400MHz
PackageTO-39
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE128 technical specifications.
General
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Diameter | 9.39mm |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 0.26inch |
| Max Collector Current | 10nA |
| Max Frequency | 400MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 400MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE128 Datasheet
Download the complete datasheet for NTE Electronics NTE128 to view detailed technical specifications.
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