NTE Electronics
NTE129P
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-237AA, TO-237, 3 PIN
Frequency50MHz
PackageTO-237
MountingThrough Hole
PolarityPNP
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Technical Specifications
NTE Electronics NTE129P technical specifications.
General
| Package/Case | TO-237 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | -80V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 4.57mm |
| Length | 5.08mm |
| Max Collector Current | 1A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 850mW |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 850mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| Width | 3.55mm |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE129P Datasheet
Download the complete datasheet for NTE Electronics NTE129P to view detailed technical specifications.
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