The NTE130 is a TO-3 flange mount bipolar junction transistor with a maximum collector current of 700uA and a maximum power dissipation of 115W. It has a collector-emitter breakdown voltage of 60V and can operate at temperatures between -65°C and 200°C. The transistor is RoHS compliant and has a transition frequency of 2.5MHz. It is suitable for use in a variety of applications, including general-purpose amplification and switching circuits.
PackageTO-3
MountingThrough Hole
PolarityNPN
Power115W
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Technical Specifications
NTE Electronics NTE130 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 7V |
| Max Collector Current | 700uA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Operating Supply Voltage | 60V |
| Polarity | NPN |
| Power Dissipation | 115W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2.5MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE130 Datasheet
Download the complete datasheet for NTE Electronics NTE130 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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