NTE Electronics
NTE131
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-66, Metal, 2 Pin
PackageTO-66-2
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE131 technical specifications.
General
| Package/Case | TO-66-2 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector-emitter Voltage-Max | 80mV |
| Emitter Base Voltage (VEBO) | 10V |
| Max Collector Current | 1mA |
| Max Operating Temperature | 90°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6W |
| Mount | Through Hole |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE131 Datasheet
Download the complete datasheet for NTE Electronics NTE131 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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