NTE Electronics
NTE132
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-106,
PackageTO-106
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE132 technical specifications.
General
| Package/Case | TO-106 |
| Continuous Drain Current (ID) | 2mA |
| Drain to Source Breakdown Voltage | -8V |
| Gate to Source Voltage (Vgs) | -25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE132 Datasheet
Download the complete datasheet for NTE Electronics NTE132 to view detailed technical specifications.
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