NTE Electronics
NTE155
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Germanium, TO-66, Metal, 2 Pin
PackageTO-66-2
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE155 technical specifications.
General
Package/Case
TO-66-2
Collector Base Voltage (VCBO)
32V
Collector Emitter Breakdown Voltage
32V
Collector-emitter Voltage-Max
80mV
Emitter Base Voltage (VEBO)
10V
Max Collector Current
1mA
Max Operating Temperature
90°C
Min Operating Temperature
-55°C
Max Power Dissipation
6W
Mount
Through Hole
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
NTE Electronics NTE155 Datasheet
Download the complete datasheet for NTE Electronics NTE155 to view detailed technical specifications.
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