NTE Electronics
NTE159M
RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-18, TO-18, 3 PIN
PackageTO-18
Current Rating600mA
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
NTE Electronics NTE159M technical specifications.
General
Package/Case
TO-18
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.6V
Collector Emitter Voltage (VCEO)
-60V
Collector-emitter Voltage-Max
1.6V
Current Rating
600mA
Diameter
5.84mm
Emitter Base Voltage (VEBO)
5V
Height
0.21inch
Max Collector Current
50nA
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.8W
Mount
Through Hole
Polarity
PNP
Power Dissipation
400mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
60V
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE159M Datasheet
Download the complete datasheet for NTE Electronics NTE159M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
