NTE Electronics
NTE16006
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
PackageSIP
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE16006 technical specifications.
General
| Package/Case | SIP |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 15V |
| Max Collector Current | 10uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Transition Frequency | 55MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE16006 Datasheet
Download the complete datasheet for NTE Electronics NTE16006 to view detailed technical specifications.
No datasheet is available for this part.