NTE Electronics
NTE161
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN
PackageTO-72
MountingThrough Hole
PolarityNPN
Power300mW
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Technical Specifications
NTE Electronics NTE161 technical specifications.
General
| Package/Case | TO-72 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Diameter | 5.58mm |
| Emitter Base Voltage (VEBO) | 3V |
| Gain | 15dB |
| Height | 0.19inch |
| Max Collector Current | 50mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Transition Frequency | 600MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE161 Datasheet
Download the complete datasheet for NTE Electronics NTE161 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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