NTE Electronics
NTE162
Power Bipolar Transistor, 10A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
PackageTO-3
Current Rating10A
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE162 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 325V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Current Rating | 10A |
| Diameter | 22.2mm |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.35inch |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 125W |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Transition Frequency | 2.5MHz |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE162 Datasheet
Download the complete datasheet for NTE Electronics NTE162 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.