NTE Electronics
NTE175
Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin
PackageTO-66
Current Rating2A
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE175 technical specifications.
General
| Package/Case | TO-66 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | 2A |
| Diameter | 12.3mm |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 0.295inch |
| Max Collector Current | 5mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 35W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE175 Datasheet
Download the complete datasheet for NTE Electronics NTE175 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.