NTE Electronics
NTE180
Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
PackageTO-3
Current Rating30A
MountingThrough Hole
PolarityPNP
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Technical Specifications
NTE Electronics NTE180 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | -90V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | 30A |
| Diameter | 22.2mm |
| Emitter Base Voltage (VEBO) | 4V |
| Height | 0.35inch |
| Max Collector Current | 1mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 200W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 90V |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE180 Datasheet
Download the complete datasheet for NTE Electronics NTE180 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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