NTE Electronics
NTE187
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin
PackageTO-202
MountingThrough Hole
PolarityPNP
Power12.5W
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Technical Specifications
NTE Electronics NTE187 technical specifications.
General
| Package/Case | TO-202 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.5inch |
| Length | 0.376inch |
| Max Collector Current | 10uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 12.5W |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| Width | 0.18inch |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE187 Datasheet
Download the complete datasheet for NTE Electronics NTE187 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.