NTE Electronics
NTE2018
Power Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Plastic/Epoxy, 18 Pin, DIP-18
PackageDIP
MountingThrough Hole
PolarityNPN
Power2.25W
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Technical Specifications
NTE Electronics NTE2018 technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Height | 4.06mm |
| Length | 24mm |
| Max Collector Current | 600mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -20°C |
| Max Power Dissipation | 2.25W |
| Mount | Through Hole |
| Output Voltage | 50V |
| Polarity | NPN |
| Power Dissipation | 2.25W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Width | 6.6mm |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE2018 Datasheet
Download the complete datasheet for NTE Electronics NTE2018 to view detailed technical specifications.
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