NTE Electronics
NTE213
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin
MountingStud
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Technical Specifications
NTE Electronics NTE213 technical specifications.
General
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 40V |
| Max Collector Current | 4mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 170W |
| Mount | Stud |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE213 Datasheet
Download the complete datasheet for NTE Electronics NTE213 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.