NTE Electronics
NTE215
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE215 technical specifications.
General
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Max Collector Current | 100uA |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Transition Frequency | 20MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE215 Datasheet
Download the complete datasheet for NTE Electronics NTE215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.