NTE Electronics
NTE218
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin
PackageTO-66
Current Rating4A
MountingThrough Hole
PolarityPNP
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Technical Specifications
NTE Electronics NTE218 technical specifications.
General
| Package/Case | TO-66 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 4A |
| Diameter | 12.3mm |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 0.295inch |
| Max Collector Current | 1mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 250W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE218 Datasheet
Download the complete datasheet for NTE Electronics NTE218 to view detailed technical specifications.
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