NTE Electronics
NTE219
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
PackageTO-3
MountingThrough Hole
PolarityPNP
Power115W
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Technical Specifications
NTE Electronics NTE219 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 3V |
| Diameter | 22.2mm |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 0.35inch |
| Max Collector Current | 700uA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 115W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2.5MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE219 Datasheet
Download the complete datasheet for NTE Electronics NTE219 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.