NTE Electronics
NTE224
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-39F, 3 PIN
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE224 technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Emitter Base Voltage (VEBO) | 4V |
| Max Collector Current | 2A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 10W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE224 Datasheet
Download the complete datasheet for NTE Electronics NTE224 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.