NTE Electronics
NTE226
Power Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, PNP, Germanium, TO-66, Metal, 2 Pin, JAPANESE TO-66, 2 PIN
PackageTO-66-2
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE226 technical specifications.
General
| Package/Case | TO-66-2 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 200uA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 12W |
| Mount | Through Hole |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE226 Datasheet
Download the complete datasheet for NTE Electronics NTE226 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.