NTE Electronics
NTE227
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN
Frequency200MHz
PackageTO-237
MountingThrough Hole
Quick Jump:
Technical Specifications
NTE Electronics NTE227 technical specifications.
General
| Package/Case | TO-237 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 100nA |
| Max Frequency | 200MHz |
| Max Power Dissipation | 850mW |
| Mount | Through Hole |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE227 Datasheet
Download the complete datasheet for NTE Electronics NTE227 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.